Researchers at Los Alamos National Laboratory have developed a breakthrough method for measuring the thermal expansion coefficient of atom-thin materials. This advancement is crucial for the future of microelectronics, enabling precise thermal management necessary for the reliability and efficiency of next-generation electronic devices.
Scientists at Lawrence Berkeley National Laboratory and UC Berkeley have developed advanced microcapacitors using hafnium oxide and zirconium oxide. These innovations promise a 170-fold increase in power density for electronic devices, potentially revolutionizing various industries.
